IPW60R037P7

The technology used in the design of the 600V CoolMOS™ P7 series power transistor is based on the superjunction (SJ) principle. This technology is revolutionary for high voltage power MOSFETs and was pioneered by Infineon Technologies. The CoolMOS™ P7 series is the 7th generation platform and is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, low ringing tendency, robustness of body diode against hard commutation, and excellent ESD capability. The design also features extremely low switching and conduction losses, making switching applications more efficient, compact, and cooler.

The CoolMOS™ P7 series offers several benefits, including: - Suitable for hard and soft switching applications due to outstanding commutation ruggedness - Significant reduction of switching and conduction losses - Excellent ESD robustness of over 2kV (HBM) for all products - Combines fast switching SJ MOSFET with excellent ease of use, low ringing tendency, robust body diode against hard commutation, and excellent ESD capability - Extremely low switching and conduction losses leading to more efficient, compact, and cooler switching applications