FDG1024NZ

The maximum power dissipation (PD) at 25°C for the FDG1024NZ MOSFET is determined by the formula PD = (TJ - TA) / RθJA, where TJ is the junction temperature, TA is the ambient temperature, and RθJA is the thermal resistance from junction to ambient [2]. From the provided information, the thermal resistance RθJA for the FDG1024NZ MOSFET is given as 415 oC/W [1]. Therefore, to calculate the maximum power dissipation at 25°C, we need to know the junction temperature (TJ) and the ambient temperature (TA). Since the typical characteristics are given at TJ = 25 °C unless otherwise noted [2], we can assume that the junction temperature (TJ) is 25°C. The ambient temperature (TA) is not explicitly mentioned in the provided information. Therefore, to calculate the maximum power dissipation (PD) at 25°C for the FDG1024NZ MOSFET, we need to know the ambient temperature (TA) to substitute it into the formula PD = (TJ - TA) / RθJA [2]. Sorry, I couldn't find the exact value for the maximum power dissipation (PD) at 25°C in the PDF.

The maximum drain to source voltage (VDS) for the FDG1024NZ Dual N-Channel Power Trench MOSFET is 20 V [3].