MRFE6VP5300NR1

Some features of the MRFE6VP530RF Power LDMOS Transistors mentioned in the document include high gain, high efficiency, and high linearity.

To determine the typical output power (Pout) for a continuous wave (CW) signal at a frequency of 87.5-1MHz using the MRFE6VP5300NR1 RF Power LDMOS Transistor, we need to refer to the datasheet of the transistor. The datasheet provides information on the output power capabilities of the transistor at different frequencies. According to the datasheet, the MRFE6VP5300NR1 RF Power LDMOS Transistor can deliver an output power of up to 300 watts in a CW signal at frequencies ranging from 87.5-1MHz. Therefore, the typical output power (Pout) for a continuous wave (CW) signal at a frequency of 87.5-1MHz using the MRFE6VP5300NR1 RF Power LDMOS Transistor is 300 watts.

The load mismatch/ruggedness result for a pulse signal (1μsec, 2Duty Cycle) at a frequency of 2MHz using the MRFE6VP5300GNR1 RF Power LDMOS Transistor is 20:1 VSWR.