TLP251(TP1)

Features

-Input threshold current: IF=5mA(max.)

-Supply current (I_CC): 11mA(max.)

-Supply voltage (V_CC): 10−35V

-Output current (IO): ±0.4A(max.)

-Switching time (t_pLH / t_pHL): 1μs(max.)

-Isolation voltage: 2500Vrms(min.)

-UL recognized: UL1577, file no.E67349

-Option(D4)

  VDE Approved : DIN EN60747-5-2

  Maximum Operating Insulation Voltage : 890V_PK

  Highest Permissible Over Voltage : 4000V_PK

Description

The TOSHIBA TLP251 consists of a GaAℓAs light emitting diode and a integrated photodetector.

This unit is 8-lead DIP package.

TLP251 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A)

Request a quote TLP251(TP1) at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of TLP251(TP1) in stock for sale, check stock quantity and pricing, view product specifications, and order contact us：sales@censtry.com.
The price and lead time for TLP251(TP1) depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.